MRF8S9120NR3【PDF 1/16 页】FET RF N-CH 900MHZ QM780-2

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录94

[1页]2页 3页 4页 5页

MRF8S9120NR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed for CDMA base station applications with frequencies from 700 to

1000 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

800 mA, Pout

= 33 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

920 MHz

20.1

34.6

6.3

--37.2

940 MHz

20.0

34.3

6.3

--37.3

960 MHz

19.8

34.2

6.3

--37.4

Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW

Output Power (3 dB Input Overdrive from Rated Pout), Designed for

Enhanced Ruggedness

Typical Pout

@ 1 dB Compression Point

120 Watts CW

880 MHz

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

800 mA, Pout

= 33 Watts Avg., IQ Magnitude Clipping, Channel

Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF.

Frequency

Gps

(dB)

ηD

(%)

Output PAR

(dB)

ACPR

(dBc)

865 MHz

20.8

35.0

6.2

--37.1

880 MHz

20.8

35.0

6.2

--37.5

895 MHz

20.6

34.8

6.2

--38.0

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal

Impedance Parameters and Common Source S--Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

Designed for Digital Predistortion Error Correction Systems

Optimized for Doherty Applications

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +70

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Document Number: MRF8S9120N

Rev. 0, 9/2010

Freescale Semiconductor

Technical Data

865--960 MHz, 33 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFET

CASE 2021--03, STYLE 1

O M -- 7 8 0 -- 2

PLASTIC

MRF8S9120NR3

Freescale Semiconductor, Inc., 2010.

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式